Product Summary

The FZ800R12KS4 is an IGBT-module.

Parametrics

FZ800R12KS4 absolute maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES :1200 V; (2)Kollektor-Dauergleichstrom TC = 80°C IC,nom: 800 A; (3)DC-collector current TC = 25 °C IC: 1200 A; (4)Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM: 1600 A; (5)Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot : 6.9 kW; (6)Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES: +/- 20V V; (7)Dauergleichstrom DC forward current IF: 800 A; (8)Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms IFRM: 1600 A; (9)Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t : 185.000 A2s; (10)Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL: 2.500 V.

Features

FZ800R12KS4 features: (1)Kollektor-Emitter Satigungsspannung collector-emitter saturation voltage IC = 800 A, VGE = 15V, Tvj = 25℃ VCE sat:3,00 - V;; (2)IC = 800 A, VGE = 15V, Tvj = 125℃ VCE sat: 3,60 - V; (3)Gate-Schwellenspannunggate threshold voltage IC = 32 mA, VCE = VGE, Tvj = 25℃ VGE(th) 4,5 5,5 6,5 V; (4)Eingangskapazita input capacitance f = 1MHz,Tvj = 25℃,VCE = 25V, VGE = 0V Cies: 52 nF; (5)Rukwirkungskapazita reverse transfer capacitance f = 1MHz,Tvj = 25℃,VCE = 25V, VGE = 0V Cres: t.b.d. nF.

Diagrams

FZ800R12KS4 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FZ800R12KS4_B2
FZ800R12KS4_B2

Infineon Technologies

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Data Sheet

0-2: $549.91
2-10: $494.90
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(USD)
Quantity
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Data Sheet

0-2: $358.98
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FZ800R12KS4_B2
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IGBT Modules N-CH 1.2KV 1.2KA

Data Sheet

0-2: $549.91
2-10: $494.90
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