(China (Mainland))
Product Summary
The 5STB18N4200 is a phase control thyristor. The 5STB18N4200 is patented free-floating silicon technology, low on-state and switching losses. The 5STB18N4200 is designed for traction, energy and industrial applications, optimum power handling capability. It is interdigitated amplifying gate.
Parametrics
5STB18N4200 absolute maximum ratings: (1)VDSM, VRSM f = 5 Hz, tp = 10 ms: 4200 V ; (2)VDRM, VRRM f = 50 Hz, tp = 10 ms: 4200 V ; (3)Tj = 125°C:ISM ≤ 400 mA; IRM ≤ 400 mA; (4)dV/dtcrit Exp. to 5360 V, Tvj = 90°C: 1000V/μs.
Features
5STB18N4200 features:(1)VSM = 4200 V; (2)ITAVM = 1920 A; (3)ITRMS = 3020 A; (4)ITSM = 32000 A; (5)VT0 = 0.96V; (6)rT = 0.285 mΩ.
Diagrams
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