Product Summary

The BSM200GA120DN2IGBT is a power module.

Parametrics

BSM200GA120DN2IGBT absolute maximum ratings : (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage (RGE = 20 kW): 1200V; (3)Gate-emitter voltage : ± 20V; (4)DC collector current: 200A TC = 25 °C; 300A TC = 80 °C; (5)Pulsed collector current, tp = 1 ms: 600A TC= 25 °C; 400A TC= 80°C; (6)Power dissipation per IGBT TC = 25 °C: 1550W; (7)Chip temperature: +150 °C; (8)Storage temperature: -40 ... + 125°C; (9)Thermal resistance, chip case: ≦ 0.08 K/W; (10)Diode thermal resistance, chip case : ≦ 0.15 K/W; (11)Insulation test voltage, t = 1min. : 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm.

Features

BSM200GA120DN2IGBT features : (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM200GA120DN2IGBT pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM200GA120DN2
BSM200GA120DN2
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-1: $71.06
1-10: $63.95
BSM200GA120DN2C
BSM200GA120DN2C
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2F
BSM200GA120DN2F
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2FS
BSM200GA120DN2FS
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2FS_E3256
BSM200GA120DN2FS_E3256
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $79.20
6-10: $71.40
BSM200GA120DN2S
BSM200GA120DN2S
Infineon Technologies
IGBT Transistors 1200V 200A SINGLE
Data Sheet
0-6: $78.50
6-10: $70.65
BSM200GA120DN2S_E3256
BSM200GA120DN2S_E3256
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $79.20
6-10: $71.40